RM20TPM-H02 - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE

RM20TPM-H02_4356452.PDF Datasheet

Part No.

RM20TPM-H02 RM20TPM-H RM20TPM-M

Description

Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE

File Size

35.45K / 3 Page

Maker

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: RM20TPM-2H

Maker: MITSUBIS..

Pack: 模块

Stock: Reserved

Unit price for :

50: $30.15

100: $28.65

1000: $27.14

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Homepage

http://www.mitsubishichips.com/

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Full text search : Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE

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Related keyword From Full Text Search System

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RM20TPM-H02 Processor	RM20TPM-H02 Supply	RM20TPM-H02 voltage vgs	RM20TPM-H02 Integrated	RM20TPM-H02 switching